Non-Volatile CBRAM/MIM Switching Technology for Electronically Reconfigurable Passive Microwave Devices

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Etienne Perret. Non-Volatile CBRAM/MIM Switching Technology for Electronically Reconfigurable Passive Microwave Devices

Table of Contents

List of Illustrations

List of Tables

Guide

Pages

Non-Volatile CBRAM/MIM Switching Technology for Electronically Reconfigurable Passive Microwave Devices. Theory and Methods for Application in Rewritable Chipless RFID

Preface

1. Motivation and Background: RF Switches and the Need for a Non-Volatile RF Switch. 1.1. Introduction

1.2. Requirements and definition of a switch at RF and microwave frequencies

1.3. Review of RF and microwave switching technologies

1.3.1. Electromechanical switches: MEMS

1.3.2. Solid-state semiconductor switches

1.3.2.1. PIN diode RF switches

1.3.2.2. FET-based RF switch

1.3.3. Memristive RF switches

1.3.3.1. Phase change material-based RF switches

1.3.3.2. CBRAM/MIM RF switches

1.4. State of the art of CBRAM/MIM RF switching technology

1.5. Demand for a non-volatile RF switch and selection of CBRAM/MIM technology

1.6. Conclusion

2. Real-World Implementation Challenges of a Low-Cost Non-Volatile RF Switch. 2.1. Introduction

2.1.1. Conductive bridging random access memory switches based on nafion as ion conductor

2.2. CBRAM-based fully passive solid-state RF switch on classic RF substrates: design and process optimization

2.2.1. Design of a CBRAM-based shunt mode RF switch

2.2.2. Fabrication process

2.2.3. Results and discussions

2.3. Electrical equivalent model analysis

2.4. Effect of filament resistance of CBRAM switches on RF transmission

2.5. Time stability, switching cycles and other interesting features

2.5.1. Reason for choice of CPW transmission line for presented switch

2.6. Fabrication technique for realization of CBRAM/MIM RF switches on flexible substrates

2.6.1. CBRAM-based fully passive solid-state RF switch on flexible paper substrates

2.6.2. Results and discussion

2.7. Application example: design and realization of solid-state non-volatile SPDT switch

2.8. Conclusion

3. Solid-State Rewritable Chipless RFID Tags: Electronically Rewritable RF Barcodes. 3.1. Introduction: chipless RFID technology

3.2. Chipless RFID reader system used in this experiment

3.3. Realization of solid-state electronically rewritable chipless RFID tags

3.3.1. Electronically rewritable chipless RFID tags on classic rigid substrates

3.3.1.1. Results and discussions

3.3.2. Electronically rewritable chipless RFID tags on flexible substrates

3.3.2.1. Results and discussions

3.4. Effect of CBRAM/MIM filament resistance on RCS characteristics of presented electronically rewritable resonators

3.5. Electrical equivalent model of electronically rewritable chipless RFID tags

3.6. Discussion of data encoding strategies for electronically rewritable chipless RFID tags based on CBRAM/MIM technology

3.7. Advantages of using integrated CBRAM/MIM switches for chipless RFID applications

3.8. Conclusion

4. Fully Passive Solid-State Electronically Reconfigurable Filter and Antenna Models. 4.1. Introduction

4.2. CBRAM-MIM switches for electronically reconfigurable filter applications

4.2.1. Electronically reconfigurable band-stop filter

4.2.1.1. Experimental results

4.2.1.2. Equivalent electrical model and mechanism of operation

4.2.1.2.1. Design N1 (electronically reconfigurable shorted stub band-stop filter)

4.2.1.2.2. Design N2 (electronically reconfigurable open stub band-stop filter)

4.2.1.3. Effect of MIM switch capacitan e on resonance frequency of presented electronically reconfigurable filters

4.2.2. Discussion of extension of the proposed idea of CBRAM/MIM RF switching to more efficient filter topologies

4.2.2.1. Example of an electronically reconfigurable band-pass filter

4.2.2.2. Techniques to improve performance characteristics of presented design of electronically reconfigurable band-stop filters

4.3. MIM switches for electronically pattern reconfigurable antenna applications

4.3.1. Electronically radiation pattern steerable antenna using CBRAM/MIM RF switches (design and fabrication)

4.3.1.1. Experiments, results and discussion

4.3.1.2. Effect of filament resistance of integrated CBRAM/MIM switch on antenna gain

4.4. Advantages of using proposed CBRAM RF switch technology for reconfigurable antenna and filter applications

4.5. Conclusion

Conclusion

Appendix. A.1. Observation of conductive filament formation in CBRAM/MIM switching cells

References

Index

B, C

E, F

I, M

P

R, S

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“…ajnaana-timirandhasya jnanaanjana-salakaya caksur-unmilitam yena tasmai sri-guruve namah…”

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We take this work as a humble beginning for a new innovation of electronically reconfigurable and non-volatile passive RF and microwave devices, which is dedicated to the future, and nurtured from deeply within our heart, with our passion and wide-eyed dreams for the betterment of current science and technology. Our investigations and findings are organized into four chapters in this book, as described below.

In Chapter 1, a general idea of the motivation for and background of the need for a non-volatile RF switch is discussed in detail. A review of prominent RF switching technologies is presented, along with the state of the art of research in CBRAM/MIM RF switch technology. The requirement of non-volatile RF switches and the reasons for the choice of CBRAM/MIM technology for this are also explained in detail.

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