Ferroic Materials for Smart Systems

Ferroic Materials for Smart Systems
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Presents state-of-the-art knowledge?from basic insights to applications?on ferroic materials-based devices <br> <br> This book covers the fundamental physics, fabrication methods, and applications of ferroic materials and covers bulk, thin films, and nanomaterials. It provides a thorough overview of smart materials and systems involving the interplays among the mechanical strain, electrical polarization, magnetization, as well as heat and light. Materials presented include ferroelectric, multiferroic, piezoelectric, electrostrictive, magnetostrictive, and shape memory materials as well as their composites. The book also introduces various sensor and transducer applications, such as ultrasonic transducers, surface acoustic wave devices, microwave devices, magneto-electric devices, infrared detectors and memories. <br> <br> Ferroic Materials for Smart Systems: Fabrication, Devices and Applications introduces advanced measurement and testing techniques in ferroelectrics, including FeRAM and ferroelectric tunnelling based resistive switching. It also looks at ferroelectricity in emerging materials, such as 2D materials and high-k gate dielectric material HfO2. Engineering considerations for device design and fabrication are examined, as well as applications for magnetostrictive devices. Multiferroics of materials possessing both ferromagnetic and ferroelectric orders is covered, along with ferroelastic materials represented by shape memory alloy and magnetic shape memory alloys. <br> <br> -Brings together physics, fabrication, and applications of ferroic materials in a coherent manner <br> -Discusses recent advances in ferroic materials technology and applications <br> -Covers dielectric, ferroelectric, pyroelectric and piezoelectric materials <br> -Introduces electrostrictive materials and magnetostrictive materials <br> -Examines shape memory alloys and magneto-shape-memory alloys <br> -Introduces devices based on the integration of ferroelectric and ferromagnetic materials such as multiferroic memory device and ME coupling device for sensor applications <br> <br> Ferroic Materials for Smart Systems: Fabrication, Devices and Applications will appeal to a wide variety of researchers and developers in physics, materials science and engineering. <br>

Оглавление

Jiyan Dai. Ferroic Materials for Smart Systems

Table of Contents

List of Tables

List of Illustrations

Guide

Pages

Ferroic Materials for Smart Systems. From Fundamentals to Device Applications

Copyright

1 General Introduction: Smart Materials, Sensors, and Actuators

1.1 Smart System

1.2 Device Application of Ferroelectric Materials

1.2.1 Piezoelectric Device Applications

1.2.2 Infrared Sensor

1.2.3 Ferroelectric RAM (FeRAM)

1.3 Device Application of Ferromagnetic Materials

1.3.1 Spin‐Transfer Torque Memory

1.3.2 Magnetic Field Sensor Based on Multiferroic Device

1.4 Ferroelastic Material and Device Application

1.5 Scope of This Book

References

2 Introduction to Ferroelectrics. 2.1 What Is Ferroelectrics?

2.1.1 P–E Loop

2.1.2 Relationships Between Dielectric, Piezoelectric, Pyroelectric, and Ferroelectric. 2.1.2.1 Ferroelectric–Dielectric

2.1.2.2 Ferroelectric–Piezoelectric

2.1.2.3 Ferroelectric–Pyroelectric

2.2 Origin of Ferroelectrics. 2.2.1 Structure‐Induced Phase Change from Paraelectric to Ferroelectric

2.2.2 Soft Phonon Mode

2.3 Theory of Ferroelectric Phase Transition. 2.3.1 Landau Free Energy and Curie–Weiss Law

2.3.2 Landau Theory of First‐Order Phase Transition

2.3.3 Landau Theory of a Second‐Order Phase Transition

2.4 Ferroelectric Domains and Domain Switching. 2.4.1 Domain Structure

2.4.2 Ferroelectric Switching

2.5 Ferroelectric Materials

2.5.1 From BaTiO3 to SrTiO3

2.5.2 From PbTiO3 to PbZrO3

2.5.3 Antiferroelectric PbZrO3

2.5.3.1 Pb(Zrx Ti1−x)O3 (PZT)

2.5.4 Relaxor Ferroelectrics

2.5.4.1 Relaxor Ferroelectrics: PMN‐xPT Single Crystal

2.5.4.2 Polar Nano Regions

2.5.4.3 Morphotropic Phase Boundary (MPB) of PMN‐PT Crystal

2.6 Ferroelectric Domain and Phase Field Calculation

References

3 Device Applications of Ferroelectrics

3.1 Ferroelectric Random‐Access Memory

3.2 Ferroelectric Tunneling Non‐volatile Memory

3.2.1 Tunneling Models

3.2.2 Metal–Ferroelectric–Semiconductor Tunnel Junction

3.2.3 Ferroelectric Tunneling Memristor

3.2.4 Strain Modulation to Ferroelectric Memory

3.3 Pyroelectric Effect and Infrared Sensor Application. 3.3.1 Pyroelectric Coefficient

3.3.2 Pyroelectric Infrared Sensor

3.3.3 Pyroelectric Figures of Merit

3.4 Application in Microwave Device

3.5 Ferroelectric Photovoltaics

3.6 Electrocaloric Effect

References

4. Ferroelectric Characterizations

4.1 P–E Loop Measurement

4.2 Temperature‐Dependent Dielectric Permittivity Measurement

4.3 Piezoresponse Force Microscopy (PFM)

4.3.1 Imaging Mechanism of PFM

4.3.2 Out‐of‐plane Polarization (OPP) and In‐plane Polarization (IPP) PFM

4.3.2.1 Electrostatic Force in PFM

4.3.2.2 Perspectives of PFM Technique

4.4 Structural Characterization

4.5 Domain Imaging and Polarization Mapping by Transmission Electron Microscopy

4.5.1 Selected Area Electron Diffraction (SAED)

4.5.2 Convergent Beam Electron Diffraction (CBED) for Tetragonality Measurement

References

5 Recent Advances in Ferroelectric Research

5.1 Size Limit of Ferroelectricity

5.2 Ferroelectricity in Emerging 2D Materials

5.3 Ferroelectric Vortex

5.4 Molecular Ferroelectrics

5.5 Ferroelectricity in HfO2 and ZrO2 Fluorite Oxide Thin Films

5.6 Ferroic Properties in Hybrid Perovskites

References

6 Piezoelectric Effect: Basic Theory. 6.1 General Introduction to Piezoelectric Effect

6.2 Piezoelectric Constant Measurement

6.2.1 Piezoelectric Charge Constant

6.2.2 Piezoelectric Voltage Constant

6.2.3 Dielectric Permittivity

6.2.4 Young's Modulus (Elastic Stiffness)

6.2.5 Elastic Compliance

6.2.6 Electromechanical Coupling Factor

6.2.6.1 How to Measure Electromechanical Coupling Factor?

Under Static or Low Frequency

High‐Frequency Resonance Measurement

6.3 Equivalent Circuit

6.4 Characterization of Piezoelectric Resonator Based on a Resonance Technique

6.4.1 Length Extensional Mode of a Rod

6.4.2 Extensional Vibration Mode of a Long Plate

6.4.3 Thickness Shear Mode of a Thin Plate

6.4.4 Thickness Mode of a Thin Disc/Plate

6.4.5 Radial Mode in a Thin Disc

6.4.6 Mechanical Quality Factor

References

7 Piezoelectric Devices

7.1 Piezoelectric Ultrasonic Transducers

7.1.1 Structure of Ultrasonic Transducers

7.1.2 Theoretical Models of Ultrasonic Transducer (KLM Model)

7.1.3 Characterization of Ultrasonic Transducers

7.1.3.1 Bandwidth (BW)

7.1.3.2 Sensitivity of the Transducer

7.1.3.3 Resolution

7.1.4 Types of Ultrasonic Transducers. 7.1.4.1 Medical Application

7.1.5 Piezoelectric Film Application in Ultrasound Transducers

7.1.6 Challenges and Trend of Developing New Advanced Ultrasound Transducers

7.2 Ultrasonic Motor

7.2.1 Terminologies

7.2.2 Design of USM

7.3 Surface Acoustics Wave Devices

7.3.1 Interdigital Electrode in SAW Device

7.3.2 Acoustic Wave

7.3.3 Piezoelectric Property Considerations for SAW Devices

7.3.4 Characterization of SAW Devices

7.3.5 Lead‐Free Piezoelectric Materials

References

8 Ferromagnetics: From Material to Device

8.1 General Introduction to Ferromagnetics

8.2 Ferromagnetic Phase Transition: Landau Free‐Energy Theory

8.3 Domain and Domain Wall

8.4 Magnetoresistance Effect and Device

8.4.1 Anisotropic Magnetoresistance (AMR)

8.4.2 Giant Magnetoresistance (GMR)

8.4.3 Colossal Magnetoresistance (CMR)

8.4.4 Tunneling Magnetoresistance (TMR)

8.4.4.1 Spin‐Transfer Torque Random‐Access Memory (STT‐RAM)

8.5 Magnetostrictive Effect and Device Applications

8.5.1 Magnetostrictive Properties of Terfenol‐D

8.5.2 Magnetostrictive Ultrasonic Transducer

8.5.3 Magnetoelastic Effect

8.5.3.1 Magnetomechanical Strain Gauge

8.6 Characterizations of Ferromagnetism

8.6.1 Vibrating Sample Magnetometer (VSM)

8.6.2 Superconducting Quantum Interference Device (SQUID)

8.6.3 Magnetic Force Microscopy (MFM)

8.6.4 Magneto‐Optical Kerr Effect (MOKE)

8.7 Hall Effect. 8.7.1 Ordinary Hall Effect

8.7.2 Anomalous Hall Effect

8.7.3 Spin Hall Effect

References

9 Multiferroics: Single Phase and Composites. 9.1 Introduction on Multiferroic

9.2 Magnetoelectric Effect

9.3 Why Are There so Few Magnetic Ferroelectrics?

9.4 Single Phase Multiferroic Materials

9.4.1 Switching Mechanism in BFO Films

9.5 ME Composite Materials

9.6 Modeling the Interfacial Coupling in Multilayered ME Thin Film

9.6.1 PZT/CFO Multilayered Heterostructures

9.6.2 Ferroelectric Properties of PZT/CFO Multilayers

References

10 Device Application of Multiferroics

10.1 ME Composite Devices

10.1.1 Effect of Preload Stress

10.2 Memory Devices Based on Multiferroic Thin Films

10.3 Memory Devices Based on Multiferroic Tunneling

References

11 Ferroelasticity and Shape Memory Alloy

11.1 Shape Memory Alloy

11.1.1 SMA Phase Change Mechanism

11.1.2 Nonlinearity in SMA

11.1.3 One‐Way and Two‐Way Shape Memory Effect

11.1.4 Superelastic Effect (SE)

11.1.5 Application Examples of SMAs

11.2 Ferromagnetic Shape Memory Alloys

11.2.1 Formation of Twin Variants

11.2.2 Challenges for Ni–Mn–Ga SMA

11.2.3 Device Application of MSMA

References

Index

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Jiyan Dai

Figure 1.1 AI beats human chess player.

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A very new application example is piezoelectric‐based fingerprint ID system in mobile phone. The currently used finger identification system is based on capacitance measurement to obtain two‐dimensional (2D) information of fingerprint, but it faces the problem of difficulty to identify the fingerprint when the finger is dirty or wet. Ultrasound fingerprint identification system based on piezoelectric ultrasonic transducer and imaging system can obtain a three‐dimensional image of fingerprint with a certain depth. This can overcome the problems of the current fingerprint identification system in most mobile phones. InvenSense, Inc. is one of the main suppliers of this solution, and Figure 1.8 is an illustration of the ultrasonic fingerprint system.

Figure 1.8 Illustration of concept of a ultrasonic transducer‐based fingerprint ID system based on complementary metal‐oxide‐semiconductor micro‐electro‐mechanical systems (CMOS‐MEMS) technology.

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