Silicon Carbide. Volume 1: Growth, Defects, and Novel Applications

Silicon Carbide. Volume 1: Growth, Defects, and Novel Applications
Автор книги: id книги: 1056973     Оценка: 0.0     Голосов: 0     Отзывы, комментарии: 0 17870,3 руб.     (174,61$) Купить и читать книгу Купить бумажную книгу Электронная книга Жанр: Прочая образовательная литература Правообладатель и/или издательство: John Wiley & Sons Limited Дата добавления в каталог КнигаЛит: ISBN: 9783527629060 Возрастное ограничение: 0+

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Описание книги

This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a «Who's Who» of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

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