Читать книгу Fundamentals of Terahertz Devices and Applications - Группа авторов - Страница 3

1 Chapter 3Table 3.1 Simulation parameters for InGaAs p–i–n photodiode.Table 3.2 Simulation parameters for InGaAs MSM photoconductor.Table 3.3 Comparison among photonic signal generation techniques.

2 Chapter 4Table 4.1 Devices characteristics.Table 4.2 Measured output power at 50 GHz and estimation at 1 THz as a functi...Table 4.3 Dc photoresponse at 1550 nm of 6 × 6 μm² UTC‐PD and RCEUTC‐PD devic...

3 Chapter 8Table 8.1 A summary of recent plasmonic THz detectors.

4 Chapter 10Table 10.1 GaN and GaAs material properties.Table 10.2 Example ofR_s estimation for GaN and GaAs.Table 10.3 Material parameters used in numerical simulation (at 300 K).Table 10.4 Parameters of Selberherr's model used in simulation (at 300 K).Table 10.5 Breakdown voltage based on Ionization Integral (at 300 K).Table 10.6 Process flow of the three technologies used in this study.Table 10.7 EC parameters of 4 μm diode.

5 Chapter 12Table 12.1 Various THz communication systems and associated technologies.

6 Chapter 13Table 13.1 Development of THz technology can be sorted based on a few general...Table 13.2 A Submm spectrometer can measure a number of trace gases in the Ma...Table 13.3 A summary of space instruments since 2008.Table 13.4 The HERO concept for OST is based on being able to build and chara...