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Auger recombination process is relatively similar to the process of radiative recombination with the exception that the transitional energy is transferred to an electron or hole that is excited in the respective conduction or valance band (Figure 1.1). Due to Auger recombination the net recombination is expressed as:

(1.55)

Where Cn and Cp are the electron and hole Auger coefficients, respectively.

The most widely used Auger coefficient values were calculated by Dziewior and Schmid (Cn = 2.8 × 10^–31 cm⁶s^–1 and Cp = 0.99 × 10^–31 cm⁶s^–1) for Silicon having a doping concentration more than 5 × 10¹⁸ cm^–3.

Auger recombination is relevant in semiconductors with high carrier concentration or also under high level injection (e.g. concentrator solar cells).