Читать книгу Defects in Functional Materials - Группа авторов - Страница 21

Two-dimensional layered MoS₂ is a typical semiconductor with a well-known cross-over from indirect to direct bandgap when the thickness decreases from bulk to monolayer, as a result of quantum confinement effect. Semiconducting MoS₂ (E.g., 1.3–1.8 eV) can be promising building blocks of photodetectors, gas sensors, and opto/electronic devices. To synthesize MoS₂ atomic layers in large scale, chemical vapor deposition (CVD) [16, 17] has been demonstrated as a feasible route to realize the scalable nanoelectronic applications based on large-size high-quality thin films. However, plenty of point defects and grain boundaries are still inevitably present in the atomic thin layers after the CVD growth.