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References

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[1] W. Zhou, et al., Intrinsic structural defects in monolayer molybdenum disulfide, Nano. Lett. 13, 2615–2622 (2013).

[2] Y. Huang, et al., Bandgap tunability at single-layer molybdenum disulphide grain boundaries, Nat. Commun. 6, 6298 (2015).

[3] T. H. Ly, et al., Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries, Nat. Commun. 7, 10426 (2016).

[4] S. Manzeli, et al., 2D transition metal dichalcogenides, Nat. Rev. Mater. 2, 17033 (2017).

[5] Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Nat. Nanotechnol. 7, 699–712 (2012).

[6] C. Ataca, H. Sahin, S. Ciraci, Stable, Single-layer MX2 transition-metal oxides and dichalcogenides in a honeycomb-like structure. J. Phys. Chem. C 116, 8983–8999 (2012).

[7] Lf. Mattheis, Band structures of transition-metal-dichalcogenide layer compounds, Phys. Rev. B 8, 3719–3740 (1973).

[8] K. F. Mak, K. L. He, J. Shan, T. F. Heinz, Control of valley polarization in monolayer MoS2 by optical helicity, Nat. Nanotechnol. 7, 494–498 (2012).

[9] H. L. Zeng, J. F. Dai, W. Yao, D. Xiao, X. D. Cui, Valley polarization in MoS2 monolayers by optical pumping, Nat. Nanotechnol. 7, 490–493 (2012).

[10] T. Cao, et al., Valley-selective circular dichroism of monolayer molybdenum disulphide, Nat. Commun. 3, 887 (2012).

[11] S. F. Wu, et al., Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization, ACS Nano. 7, 2768–2772 (2013).

[12] B. Radisavljevic, A. Kis, Mobility engineering and a metal-insulator transition in monolayer MoS2, Nat. Mater. 12, 815–820 (2013).

[13] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Singlelayer MoS2 transistors, Nat. Nanotechnol. 6, 147–150 (2011).

[14] S. B. Desai, et al., MoS2 transistors with 1-nanometer gate lengths, Science 354, 99–102 (2016).

[15] S. Helveg, et al., Atomic-scale structure of single-layer MoS2 nanoclusters, Phys. Rev. Lett. 84, 951–954 (2000).

[16] X. S. Wang, H. B. Feng, Y. M. Wu, L. Y. Jiao, Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition, J. Am. Chem. Soc. 135, 5304–5307 (2013).

[17] Y. H. Lee, et al., Synthesis of large-area MoS2 atomic layers with chemical vapor deposition, Adv. Mater. 24, 2320–2325 (2012).

[18] H. P. Komsa, et al., Two-dimensional transition metal dichalcogenides under electron irradiation: Defect production and doping, Phys. Rev. Lett. 109, 035503 (2012).

[19] J. H. Hong, et al., Exploring atomic defects in molybdenum disulphide monolayers, Nat. Commun. 6, 6293 (2015).

[20] Q. Feng, et al., Growth of large-area 2D MoS2(1−x)Se2x semiconductor alloys, Adv. Mater. 26, 2648–2653 (2014).

[21] Q. L. Feng, et al., Growth of MoS2(1−x)Se2x (x = 0.41–1.00) monolayer alloys with controlled morphology by physical vapor deposition, ACS Nano. 9, 7450–7455 (2015).

[22] C. Gong, et al., Metal contacts on physical vapor deposited monolayer MoS2, ACS. Nano. 7, 11350–11357 (2013).

[23] K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Atomically thin MoS2: A new direct-gap semiconductor, Phys. Rev. Lett. 105, 136805 (2010).

[24] K. K. Liu, et al., Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates, Nano. Lett. 12, 1538–1544 (2012).

[25] Y. M. Shi, et al., van der Waals epitaxy of MoS2 layers using graphene as growth templates, Nano. Lett. 12, 2784–2791 (2012).

[26] Y. C. Lin, D. O. Dumcencon, Y. S. Huang, K. Suenaga, Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2, Nat. Nanotechnol. 9, 391–396 (2014).

[27] J. B. Hannon, S. Kodambaka, F. M. Ross, R. M. Tromp, The influence of the surface migration of gold on the growth of silicon nanowires, Nature, 440, 69–71 (2006).

[28] S. Hofmann, G. Csanyi, A. C. Ferrari, M. C. Payne, J. Robertson, Surface diffusion: The low activation energy path for nanotube growth, Phys. Rev. Lett. 95, 036101 (2005).

[29] L. E. Jensen, et al., Role of surface diffusion in chemical beam epitaxy of InAs nanowires, Nano. Lett. 4, 1961–1964 (2004).

[30] C. N. Satterfield, Mass Transfer in Heterogeneous Catalysis. (The MIT Press, 1970).

[31] J. Hong, Y. Pan, Z. Hu, D. Lv, C. Jin, W. Ji, J. Yuan, Z. Zhang, Direct imaging of kinetic pathways of atomic diffusion in monolayer molybdenum disulfide, Nano Lett. 17, 3383–3390 (2017).

[32] M. Chhowalla, et al., The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets, Nat. Chem. 5, 263–275 (2013).

[33] H. Liu, et al., Dense network of one-dimensional midgap metallic modes in monolayer MoSe2 and their spatial undulations, Phy. Rev. Lett. 113, 066105 (2014).

[34] W. Jolie, et al., Tomonaga-Luttinger liquid in a box: Electrons confined within MoS2 mirror-twin boundaries, Phy. Rev. X 9, 011055 (2019).

[35] Y. Xia, et al. Quantum confined Tomonaga-Luttinger liquid in MoSe2 twin domain boundaries, arXiv: 1908.09259 (2019).

[36] O. Lehtinen, et al., Atomic scale microstructure and properties of Se-deficient two-dimensional MoSe2, ACS Nano. 9, 3274–3283 (2015).

[37] J. V. Lauritsen, et al., Size-dependent structure of MoS2 nanocrystals, Nat. Nanotechnol. 2, 53–58 (2007).

[38] Y. Wang, et al., Monolayer PtSe2, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt. Nano. Lett. 15, 4013–4018 (2015).

[39] J. Lin, S. T. Pantelides, W. Zhou, Vacancy-induced formation and growth of inversion domains in transition-metal dichalcogenide monolayer, ACS Nano. 9, 5189–5197 (2015).

[40] B. Feng, et al., Experimental realization of two-dimensional boron sheets, Nat. Chem. 8, 563–568 (2016).

[41] S. Barja, et al., Charge density wave order in 1D mirror twin boundaries of single-layer MoSe2, Nat. Phys. 12, 751–756 (2016).

[42] J. Hong, C. Wang, H. Liu, X. Ren, J. Chen, G. Wang, J. Jia, M. Xie, C. Jin, W. Ji, J. Yuan, Z. Zhang, Inversion domain boundary induced stacking and bandstructure diversity in bilayer MoSe2, Nano. Lett. 17, 6653–6660 (2017).

[43] C. Zhang, C. P. Chuu, X. Ren, M. Li, L. J. Li, C. Jin, M. Y. Chou, C. K. Shih, Interlayer couplings, Moire patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers, Sci. Adv. 3, e1601459 (2017).

Defects in Functional Materials

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