Читать книгу Ferroic Materials for Smart Systems - Jiyan Dai - Страница 16

Spin‐transfer torque can be used to flip the active elements in magnetic random‐access memory. Spin‐transfer torque magnetic random‐access memory (STT‐RAM or STT‐MRAM) has the advantages of lower power consumption and better scalability over conventional magnetoresistive random‐access memory (MRAM), which uses magnetic field to flip the active elements. Spin‐transfer torque technology has the potential to make possible MRAM devices combining low current requirements and reduced cost; however, the amount of current needed to reorient the magnetization at present is too high for most commercial applications, and the reduction of this current density alone is the basis for present academic research in spin electronics. Figure 1.11 is a schematic diagram of spin valve structure, while arrows indicate the magnetization direction.

Figure 1.11 Schematic diagram of spin valve structure where arrows indicate the magnetization directions.