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References
Оглавление1 Boyn, S., Grollier, J., Lecerf, G. et al. (2017). Learning through ferroelectric domain dynamics in solid‐state synapses. Nature Communications 8: 1–7.
2 Chang, C.‐Y. and Chen, T.‐L. (2017). Design, fabrication, and modeling of a novel dual‐axis control input PZT gyroscope. Sensors 17 (11): 2505.
3 Cho, J. (2018). Amid contradictory forecast: IC insights: ‘Memory chips will grow at annual rate of 5% only on average by 2022’. Seoul, Korea: BusinessKorea.
4 Garlock, A., Karnes, W.M., Fonte, M. et al. (2017). Arthrodesis devices for generating and applying compression within joints. US 2017/0296241 A1, Available at: https://patents.google.com/patent/US20170296241A1/en.
5 Li, M., Dong, C., Zhou, H. et al. (2017). Highly sensitive DC magnetic field sensor based on nonlinear ME effect. IEEE Sensors Letters 1 (6): 1–4.
6 Renesas Electronics Corporation (2017). Renesas electronics achieves large‐scale memory operation in fin‐shaped MONOS flash memory for industry's first high‐performance, highly reliable MCUs in 16/14nm process nodes and beyond.
7 Wang, Y., Gray, D., Berry, D. et al. (2011). An extremely low equivalent magnetic noise magnetoelectric sensor. Advanced Materials 23 (35): 4111–4114. Available at: https://doi.org/10.1002/adma.201100773.