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1.2.3.3 FETs

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Another significant application of phosphorene is the fabrication of field-effect transistors (FETs) [38]. Phosphorene devices can offer many advantages over graphene transistors due to the good saturation of the current and their band gap [62]. Phosphorenes have attractive characteristics that are critical for advanced circuits and sophisticated amplifiers [10]. In particular, phosphorene exhibits drain current modulation of 105, high flexibility, and high carrier mobilities of about 1,000 cm2V−1s−1 which is larger than the other flexible transistors based on 2D monolayers like WSe2 and MoS2. Furthermore, when the length of channel is 300 nm, the measurements show that phosphorene exhibits a cutoff frequency of 12 GHz for the short-circuit current while frequency oscillation reaches the value of 30 Hz.

Beyond the multi-GHz frequency, phosphorene constitutes one of the best candidates for future generations of ultrathin layer transistors [10]. Moreover, phosphorene is not only used in field-effect transistor applications, but also in other electronic devices based on semiconductor materials due to its electronic properties and its charge mobility.

2D Monoelements

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