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1.1 Introduction

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The size of semiconductor devices is being continuously reduced and has entered into the nanoscale range. Every two years the number of transistors doubles because the size of the MOSFET is reduced. Reducing the size of the MOSFET reduces the size of the channel, which causes short-channel effects and it increases the leakage current. Reduction in the size of semiconductor devices has given rise to short-channel effects (SCEs). The various SCEs are parasitic capacitances, drain field effect on channel field, degraded subthreshold region of operation, mobility degradation, hot carrier effects, etc. To overcome these effects the devices need to be engineered using different techniques like gate or channel engineering. The cause of the SCEs is when the width of the drain barrier extends into the drain and source region barrier lowering. Many MOSFET structures like DG-MOSFET, GAA (Gate-all-around) MOSFET, TG (Triple-gate) MOSFET, SOI (Silicon-on-insulator) MOSFET, double-step buried-oxide including junction-less properties have been designed to overcome SCEs [1–6].

MOSFETs are used for analog and RF applications to handle the radio frequency signals that are high in power from devices like televisions, radio transmitters, and amplifiers. MOSFETs are used for biomedical applications [7]. It is used as a biosensor to detect bio-molecules. It is useful in detecting molecules like enzymes, nucleotide, protein and antibodies. Using MOSFETs as a biosensor has benefits over other methods as it has more sensitivity, compatibility, mass production and miniaturization. MOSFET is also used to store memory. It is used in the construction of SRAM cells for storing data. MOSFETs were also adopted by NASA to detect interplanetary magnetic fields and interplanetary plasma. MOSFETs are used in digital applications for switching which prevents DC to flow supply and ground that lead to reduced power consumption and providing high input impedance.

Design and Development of Efficient Energy Systems

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