Читать книгу Design and Development of Efficient Energy Systems - Группа авторов - Страница 19

References

Оглавление

1. S L Tripathi, Ramanuj Mishra, R A Mishra, “Characteristic comparison of connected DG FINFET, TG FINFET and Independent Gate FINFET on 32 nm technology” IEEE ICPCES, pp. 1-7, December, 2012.

2. Ammina, V.P., Vankudothu, S.P., Shaik, R.R. et al. An Optimized Ge Pocket SOI JLT with Efforts to Improve the Self-Heating Effect: Doping & Materials Perspective. Silicon, 2019. https://doi.org/10.1007/s12633-019-00319-x

3. F. Djeffal, H.Ferhat, T.Bentrcia. Improved analog and RF performances of gate-all-around junctionless MOSFET with drain and source extensions, Superlattices and Microstructures, 90, 132-140, 2016.

4. Nirmal Ch. Roy, Abhinav Gupta, Sanjeev Rai. Analytical surface potential modeling and simulation of junction-less double gate (JLDG) MOSFET for ultra low-power analog/RF circuits, Microelectronics Journal, 46 (10), 916-922, 2015.

5. E. Chebaki, F.Djeffal, H.Ferhati, T.Bentrcia. Improved analog/RF performance of double gate junctionless MOSFET using both gate material engineering and drain/source extensions, Superlattices and Microstructures, 92, 80-91, 2016.

6. Ali A. Orouji, M. Jagdeesh. Nanoscale SOI MOSFETs with electrically induced source/drain extension: Novel attributes and design considerations for suppressed short-channel effects, Superlattices and Microstructures, 39(5), 395-405, 2006.

7. Ajay, Rakhi Narang, Manoj Saxena, Mridula Gupta. Investigation of dielectric modulated (DM) double gate (DG) junctionless MOSFETs for application as a biosensors, Superlattices and Microstructures, 85, 557-572, 2015.

8. Varsha Pathak, Gaurav Saini. A Graded Channel Dual-Material Gate Junctionless MOSFET for Analog Applications, Procedia Computer Science, Vol. 125, 825-831, 2018.

9. Ajay Kumar, M.M.Tripathi, Rishu Chaujar. Analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications, Superlattices and Microstructures, 116, April 171-180, 2018.

10. Angsuman Sarkar, Aloke Kumar Das, Swapnadip De, Chandan Kumar Sarkar. Effect of gate engineering in double-gate MOSFETs for analog/RF applications, Microelectronics Journal, 43(11), 873-882, 2012.

11. Yon-Sup Pang, John R Brews. Design of 0.1-lm pocket n-MOSFETs for low-voltage applications, Solid-State Electronics, 46(12), 2315-2322, 2002.

12. Ajay Kumar, Neha Gupta, Rishu Chaujar. TCAD RF performance investigation of Transparent Gate Recessed Channel MOSFET, Microelectronics Journal, 49, 36-42, 2016.

13. Ying Wang, Yan Tang, Ling-ling Sun, Fei Cao. High performance of junctionless MOSFET with asymmetric gate, Superlattices and Microstructures, 97, 8-14, 2016.

14. Vimal Kumar Mishra, R. K. Chauhan. Efficient Layout Design of Junctionless Transistor Based 6-T SRAM Cell Using SOI Technology, ECS Journal of Solid State Science and Technology, 7(9)2018.

15. G.K. Saramekala Abirmoya Santra, Sarvesh Dubey, Satyabrata Jit, Pramod Kumar Tiwari. An analytical threshold voltage model for a short-channel dual-metal-gate (DMG) recessed-source/drain (Re-S/D) SOI MOSFET, Superlattices and Microstructures, 60, 580-595, 2013.

16. Arobinda Pal, Angsuman Sarkar, Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs), Engineering Science and Technology, 17 (4), December 2014, pp. 205-212, 2014.

17. Chunshan, P.C.H. Chan. Investigation of the Source/Drain Asymmetric Effects Due to Gate Misalignment in Planar Double-Gate MOSFETs, IEEE Transactions on Electron Devices, 52(1), 85-90, 2005.

18. Jae Young Song, Woo Young Choi, Ju Hee Park, Jong Duk Lee, Byung-Gook Park. Design Optimization of Gate-All-Around (GAA) MOSFETs, IEEE Transaction on Nanotechnology, 5(3), 186-191, 2006.

19. Sheng Chang, Gaofeng Wang, Qijun Huang, Hao Wang. Analytic Model for Undoped Symmetric Double-Gate MOSFETs With Small Gate-Oxide-Thickness Asymmetry, IEEE Transactions on Electron Devices, 56(10), 2297-230, 2009.

20. Shubham Tayal, Ashutosh Nandi. Performance analysis of junctionless DG-MOSFET-based 6T-SRAM with gate-stack configuration, Micro & Nano Letters, IET Journal, 13(6), 838-84, 2018.

21. Bavir, M., Abbasi, A. & Orouji, A.A. A Simulation Study of Junctionless Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Symmetrical Side Gates. Silicon (2019). https://doi.org/10.1007/s12633-019-00258-7

22. Zeinab Ramezani, Ali A. Orouji. A Novel Double Gate MOSFET by Symmetrical Insulator Packets with Improved Short Channel Effects, International Journal of Electronics, 105(3), 361-374, 2018.

23. Tripathi S. L., Patel R., Agrawal V. K. Low Leakage Pocket Junction-less DGTFET with Bio-Sensing Cavity Region. Turkish Journal of Electrical Engineering and Computer Sciences 27(4), 2466-2474, 2019.

24. Mendiratta N., Tripathi S. L., Padmanaban S. and Hossain E. Design and Analysis of Heavily Doped n+ Pocket Asymmetrical Junction-Less Double Gate MOSFET for Biomedical Applications. Appl. Sci. 10, 2499, 2020.

*Corresponding author: tri.suman78@gmail.com

Design and Development of Efficient Energy Systems

Подняться наверх