| 2D | | two‐dimensional |
| 3D | three‐dimensional |
| 3GPP | 3rd Generation Partnership Project |
| 5G | fifth‐generation |
| ABS | acrylonitrile butadiene styrene |
| ACE | Advanced Semiconductor Engineering, Inc. |
| ACP | aperture‐coupled patch |
| ADS | Advanced Design System |
| AIA | active integrated antenna |
| AiM | antenna in a module |
| AiP | antenna‐in‐package |
| AM | additive manufacturing |
| AMC | artificial magnetic conductor |
| AoB | antenna on a board |
| AoC | antenna on a chip |
| AR | axial ratio |
| ARM | advanced reduced‐instruction set‐computer machine |
| ASIC | application‐specific integrated circuit |
| ASUT | antenna system under test |
| AUT | antenna under test |
| Az | azimuth |
| BCB | benzocyclobutene |
| BC‐SRR | broadside‐coupled SRR |
| BER | bit error rate |
| BERT | BER tester |
| BiCMOS | bipolar complementary metal oxide semiconductor |
| BGA | ball grid array |
| BLE | Bluetooth low energy |
| BT | Bluetooth |
| BT | bismaleimide triazine |
| BW | bandwidth |
| C4 | controlled collapse chip connection |
| CATR | compact antenna test range |
| CCL | copper‐clad laminate |
| CLIP | continuous liquid interface printing |
| CMA | characteristic mode analysis |
| CMF | conjugate match factor |
| CMG | conjugate match gain |
| CMOS | complementary metal‐oxide semiconductor |
| CNC | computer numerical controlled |
| CP | circular polarization |
| CPS | coplanar strip |
| CPU | central processing unit |
| CPW | coplanar waveguide |
| CT | computer tomography |
| CTE | coefficient of thermal expansion |
| CUF | capillary underfill |
| DC | direct current |
| DLP | digital light projection |
| DMA | dynamic mechanical analysis |
| DRAM | dynamic random‐access memory |
| DRIE | deep reactive ion etching |
| EBG | electromagnetic bandgap |
| EIRP | equivalent isotropic radiated power |
| El | elevation |
| EM | electromagnetic |
| EMI | electromagnetic interference |
| ESD | electrostatic discharge |
| ETS | embedded traces |
| eWLB | embedded wafer‐level ball grid array |
| EZL | embedded Z line |
| FCC | Federal Communications Commission |
| FDM | fused‐deposition modeling |
| FE | front end |
| FF | far‐field |
| FMCW | frequency modulated continuous wave |
| FoM | figure of merit |
| FO PoP | fan‐out package‐on‐package |
| FO‐WLP | fan‐out wafer‐level packaging |
| FPGA | field‐programmable gate array |
| FR4 | flame resistant 4 |
| FSS | frequency selective surface |
| GaAs | gallium arsenide |
| GaN | gallium nitride |
| Gb/s | gigabit per second |
| GPU | graphics processing unit |
| GSG | ground‐signal‐ground |
| GSGSG | ground‐signal‐ground‐signal‐ground |
| GSM | global system for mobile communications |
| HAST | highly accelerated stress test |
| HBM | high bandwidth memory |
| HDI | high‐density integration |
| HDI | high‐density interconnect |
| HFSS | high‐frequency structure simulator |
| HPBW | half‐power beam width |
| HTCC | high‐temperature co‐fired ceramics |
| IC | integrated circuit |
| IEEE | Institute of Electrical and Electronics Engineers |
| IF | intermediate frequency |
| InFO_PoP | integrated fan out package on package |
| I/O | input/output |
| IoT | Internet of Things |
| ISM | industrial, scientific and medical |
| ISSCC | International Solid‐State Circuits Conference |
| JPL | jet propulsion laboratory |
| LCD | liquid crystal display |
| LCP | liquid crystal polymer |
| LGA | land grid array |
| LHCP | left‐hand circular polarization |
| LNA | low‐noise amplifier |
| LP | linearly polarized |
| LTCC | low‐temperature co‐fired ceramic |
| MACM | multiple amplitude component method |
| MAPCM | multiple amplitude phase component method |
| MCM | multi‐chip module |
| MEMS | micro‐electromechanical systems |
| MIM | metal–insulator–metal |
| MIMO | multiple input multiple output |
| MMIC | monolithic microwave integrated circuit |
| MMWAC | mmWave anechoic chamber |
| mmWave | millimeter‐wave |
| mSAP | modified semi‐additive process |
| MUF | molded underfill |
| NF | near‐field |
| NF | noise figure |
| NIST | National Institute of Standards and Technology |
| NRE | non‐recurring engineering |
| NRW | Nicholson–Ross–Weir |
| OTA | over‐the‐air |
| PAE | power‐added efficiency |
| PAM | phase amplitude method |
| PBO | polybenzoxazoles |
| PCB | printed circuit board |
| PEC | perfect electric conductor |
| PER | packet error rate |
| PET | polyethylene terephthalate |
| pHEMT | pseudomorphic high electron mobility transistor |
| PI | polyimide |
| PLA | polylactic acid |
| PLL | phase‐locked loop |
| PMC | perfect magnetic conductor |
| PP | polypropylene |
| PPM | polarization pattern method |
| PTH | plated‐through‐hole |
| p.u.l. | per unit length |
| QFN | quad flat non‐leaded |
| QFP | quad flat package |
| R&D | research and development |
| RAM | random‐access memory |
| RCC | resin‐coated copper |
| RCS | radar cross‐section |
| RDL | redistribution layer |
| RF | radio frequency |
| RFIC | radio frequency integrated circuit |
| RFID | radio‐frequency identification |
| RHCP | right‐hand circular polarization |
| RLCG | resistance, inductance, capacitance, and conductance |
| RMS | root mean square |
| RoHS | Restriction of Hazardous Substances Directive |
| RSM | rotating source method |
| RX | receiver |
| SAM | scanning acoustic microscopy |
| SAP | semi‐additive process |
| SAR | synthetic aperture radar |
| SEM | scanning electron microscopy |
| SG | signal‐ground |
| SiGe | silicon germanium |
| SiP | system‐in‐package |
| SISO | single input, single output |
| SIW | substrate integrated waveguide |
| SLA | stereolithography |
| SLC | surface laminar circuit |
| SLM | selective laser melting |
| SLS | selective laser sintering |
| SMA | sub‐miniature version A |
| SNR | signal‐to‐noise ratio |
| SoC | system on chip |
| SoP | system‐on‐package |
| SPDR | split post dielectric resonator |
| SPP | surface plasmon polariton |
| SRR | split‐ring resonator |
| SSD | solid state drive |
| SSMA | small SMA |
| SUB | subtractive process |
| TCB | thermocompression bonding |
| TE | transverse electric |
| TEM | transverse electro‐magnetic |
| TEV | through encapsulant via |
| TFMSL | thin‐film microstrip line |
| TIM | thermal interface material |
| TIV | through InFO via |
| TL | transmission line |
| TMA | thermomechanical analyzer |
| TM | transverse magnetic |
| TMV | through‐mold vias |
| TPP | two‐photo polymerization |
| TSMC | Taiwan Semiconductor Manufacturing Company |
| TSOP | thin small outline package |
| TSV | through silicon via |
| TX | transmitter |
| μvia | microvia |
| UBM | under bump metallurgy |
| UHF | ultra‐high frequency |
| UV | ultraviolet |
| UWB | ultra‐wideband |
| VCO | voltage‐controlled oscillator |
| VGA | variable gain amplifier |
| VLSI | very‐large‐scale integration |
| VNA | vector network analyzer |
| VQFN | very thin quad flat no‐lead |
| VSWR | voltage standing wave ratio |
| WGP | wave‐guide port |
| WiGig | wireless gigabit alliance |
| WLCSP | wafer level chip scale package |
| WLP | wafer level package |
| WPAN | wireless personal area network |
| WPT | wireless power transfer |
| WSN | wireless sensor network |
