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2.2.2 Kane’s Model
ОглавлениеThe band-to-band (B2B) tunneling current (IBTBT) in tunneling FET can be obtained from the following Equation 2.2 [27–30].
As shown in Equation 2.2, W and Lgate are width and gate length TFET devices, respectively. The G (E) is generation rate of charge in tunneling FET. It is basically the number of the carriers per unit volume per unit time. The generation rate of charge carrier per unit volume per unit time can be calculated by the well-known Kane’s Model.
As shown in Equation 2.3 A, B and D are material dependent parameters of Kane’s model. E is the electric field in the device.
