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In conclusion, the present chapter summarizes the obtained results by popular device analysis technique, modeling and simulation of DG -TFET. For obtaining excellent performance of DG -TFET, the gate dielectric and band engineering technique has been implemented successfully and its effect on the DC, CV and switching performance have been investigated thoroughly. The DG - TFET shows the excellent device and circuit design characteristics in term of switching current (I_ON) ~ 4.00 × 10^-6 A/µm, leakage current (I_OFF) ~ 1.00 × 10^-20A/ µm, steep subthreshold swing (SS) ~34.25 mV/decade, I_ON/I_OFF ~ 10¹⁴ for HfO₂ (k ≈ 25) gate dielectric materials. The bandgap engineering approach in the conventional DG - TFET with high - k gate dielectrics is useful for reduction of ambipolar current (I_amb). During investigation, the suppression of the ambipolar current I_amb ~10⁸ A/µm times has been observed. The TFET-based design with hetero DG - TFET shows better transconductance efficiency (g_m/I_DS) than homo DG - TFET. The maximum cut-off frequency (f_T) ~ 0.65 GHz and GBW ~ 0.66 GHz have obtained the goal of the RF applications. The hetero DG -TFET shows a smaller power delay product (PDP) ~1.1×10^-15 watt and delay time (t_d) order of pico range (~ 600 Picoseconds). The obtained results during investigation for the proposed design supposed to the usability in the field of digital and analog applications in terms of circuit and system design with ultra-low-power applications.