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1. T. Masuhara, IEEE Asian Solid-State Circuits Conference, Jeju, pp. 5-8, 2011.

2. R. -. Yan, A. Ourmazd and K. F. Lee, IEEE Transactions on Electron Devices, Vol. 39, pp. 1704 - 1710, 1992.

3. A. M. Ionescu, IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, pp. 1.2.1-1.2.8, 2017.

4. U. E. Avci, D. H. Morris and I. A. Young, IEEE Journal of the Electron Devices Society, Vol. 3, pp. 88-95, 2015.

5. J. W. Lee and W. Y. Choi, IEEE Access, Vol. 8, pp. 67617-67624, 2020.

6. W. Y. Choi, B. Park, J. D. Lee and T. K. Liu, IEEE Electron Device Letters, Vol. 28, pp. 743-745, 2007.

7. K. Narimani et al., Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, pp. 75-78, 2017.

8. W. Cao, D. Sarkar, Y. Khatami, J. Kang, J. and K. Banerjee, AIP Advances, Vol 4, pp. 067141, 2014.

9. S. Yang, H. Lv, B. Lu, S. Yan and Y. Zhang, IEEE Access, Vol. 8, pp. 23559-23567, 2020.

10. W. Li and J. C. S. Woo, IEEE Transactions on Electron Devices, Vol. 67, pp. 1480-1484, 2020.

11. N. Guenifi, S.B. Rahi, and T. Ghodbane, Materials Focus, Vol. 7, pp. 866-872, 2018.

12. S.B. Rahi, B. Ghosh, RSC Advances, Vol. 5, pp. 54544-54550, 2015.

13. A. C. Seabaugh and Q. Zhang, Proceedings of the IEEE, Vol. 98, pp. 2095-2110, 2010.

14. K. M. Choi and W. Y. Choi, IEEE Electron Device Letters, Vol. 34, pp. 942-944, 2013.

15. S.B. Rahi, P. Asthana & S. Gupta, Journal of Computational Electronics, Vol. 16, pp. 30-38, 2017.

16. S.B. Rahi, B. Ghosh and B. Bishnoi, Journal of Semiconductors, Vol.36, pp: 034002_1-034002_5, 2015.

17. D. Sarkar, X. Xie, W. Liu, et al., Nature, Vol. 526, pp. 91–95, 2015.

18. A.M. Ionescu, and H. Riel, Nature, Vol. 479, pp.329-337, 2011.

19. E.H. Toh, G.H.Wang, G. Samudra, and Y.C.Yeo, Applied Physics Letters, Vol. 90, pp. 263507e1-263507-3,2007.

20. A. C. Seabaugh and Q. Zhang, Proceedings of the IEEE, Vol. 98, pp. 2095-2110, 2010.

21. I. A. Pindoo, S. K. Sinha and S. L. Tripathi, International Conference on Cutting-edge Technologies in Engineering (ICon-CuTE), Uttar Pradesh, India, pp. 28-32, 2019.

22. H. Liu, S. Datta and V. Narayanan, International Symposium on Low Power Electronics and Design (ISLPED), Beijing, pp. 145-150, 2013.

23. W. Cheng et al., IEEE Journal of the Electron Devices Society, Vol. 8, pp. 336-340, 2020.

24. A. S. Verhulst, D. Leonelli, R. Rooyackers and G. Groeseneken, Journal of Applied Physics, Vol. 110, pp. 024510, 2011.

25. B. Sedighi, X. S. Hu, H. Liu, J. J. Nahas and M. Niemier, IEEE Transactions on Circuits and Systems, Vol. 62, pp. 39-48, 2015.

26. K. Boucart and A. M. Ionescu, IEEE Transactions on Electron Devices, Vol. 54, pp. 1725-1733, July 2007.

27. S. Datta, H. Liu, and V. Narayanan, Microelectronics Reliability, Vol. 54, pp. 861-874, 2014.

28. X. Wang, Z. Tang, L. Cao, J. Li and Y. Liu, IEEE Access, Vol. 7, pp. 100675-100683, 2019.

29. E. O. Kane, Journal of Physics and Chemistry of Solids, Vol. 12, pp. 181–188, 1959.

30. W. G. Vandenberghe, A. S. Verhulst, G. Groeseneken, B. Soree and W. Magnus, MELECON 2008 - The 14th IEEE Mediterranean Electro technical Conference, Ajaccio, 2008, pp. 923-928.

*Corresponding author: guenifi_2000@yahoo.fr